Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

Thin-film transistors based on amorphous oxide semiconductors could be used to create low-
cost backplane technology for large flat-panel displays. However, a trade-off between …

Amorphous InGaZnO x (a-IGZO) thin-film transistors (TFTs) are currently used in flat-panel
displays due to their beneficial properties. However, the mobility of∼ 10 cm2/(V s) for the a …

Highly stable IGZO thin-film transistors derived from atomic layer deposition are crucial for
the semiconductor industry. However, unavoidable defect generation during high …

In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …

Tin oxide is a promising channel material, offering the advantages of being low-cost and
environmentally friendly and having a wide band gap. However, despite the high electron …

Plasma‐enhanced atomic layer deposition (PEALD)‐based bilayer IZO (back channel)/IGZO
top‐gate thin‐film transistors (TFTs) with different IZO and IGZO layer thicknesses are …

The effect of doping with three different group IV metal cations, specifically Ti4+, Zr4+, and
Hf4+, on the stability of amorphous indium–zinc-oxide (InZnO) thin-film transistors (TFTs) …

Amorphous oxide semiconductors are promising for their use in thin-film transistor (TFT)
devices due to their high carrier mobility and large-area uniformity. However, their …