GaN power integration technology and its future prospects

J Wei, Z Zheng, G Tang, H Xu, G Lyu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …

Analysis, design and experimental assessment of a high power density ceramic dc-link capacitor for a 800 V 550 kVA electric vehicle drive inverter

D Cittanti, F Stella, E Vico, C Liu, J Shen… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
The drive inverter is a crucial component of an electric vehicle (EV) powertrain, being
responsible for the DC/AC power conversion between the battery and the electric motor. The …

New FOM-based performance evaluation of 600/650 V SiC and GaN semiconductors for next-generation EV drives

D Cittanti, E Vico, IR Bojoi - IEEE Access, 2022 - ieeexplore.ieee.org
The drive inverter represents a central component of an electric vehicle (EV) drive train,
being responsible for the DC/AC power conversion between the battery and the electrical …

Wide band gap semiconductor devices for power electronic converters

SMSH Rafin, R Ahmed… - 2023 Fourth International …, 2023 - ieeexplore.ieee.org
Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow
for the functioning of prospective power devices at higher temperatures, voltages, and …

Analysis and design of a high power density full-ceramic 900 V DC-link capacitor for a 550 kVA electric vehicle drive inverter

D Cittanti, F Stella, E Vico, C Liu, J Shen… - … (IPEC-Himeji 2022 …, 2022 - ieeexplore.ieee.org
The drive inverter is a crucial component of an electric vehicle (EV) powertrain, being
responsible for the DC/AC power conversion between the battery and the electric motor. The …

Inverter with paralleled modules to extend current capacity and combat motor overvoltage in SiC-based adjustable speed drives

W Zhou, M Diab, X Yuan, L Xie… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article proposes a quasi-three-level (Q3L) pulsewidth modulation (PWM)-based module-
parallel inverter to address two major issues of deploying SiC mosfet s in high-power cable …

Miniaturized current shunt with high bandwidth and low parasitics for high-integrated applications: Electro-thermal considerations and co-design

Y Wang, J Gong, M Zou, L Wang… - … on Power Electronics, 2024 - ieeexplore.ieee.org
The development of current sensors for wide-bandgap (WBG) applications consistently
emphasizes high bandwidth, minimal invasiveness, and integration. Despite the meticulous …

Synergetic control of three-phase AC-AC current-source converter employing monolithic bidirectional 600 V GaN transistors

N Nain, D Zhang, J Huber, JW Kolar… - 2021 IEEE 22nd …, 2021 - ieeexplore.ieee.org
AC-AC current-source converters (CSCs) are an interesting alternative to the widely-used
voltage-source converters for next-generation motor drive applications, as they inherently …

Passive component optimization for current-source-inverters

B Riegler, A Muetze - IEEE Transactions on Industry …, 2023 - ieeexplore.ieee.org
In addition to the actual semiconductor components and the cooling solutions required to
dissipate losses, passive components account for a large part of the volume of power …

Comparative evaluation of three-phase AC-AC voltage/current-source converter systems employing latest GaN power transistor technology

N Nain, J Huber, JW Kolar - 2022 International Power …, 2022 - ieeexplore.ieee.org
The emergence of monolithic bidirectional GaN power transistors sparks renewed interest in
AC-AC current-source converters (CSCs) as an alternative to AC-AC voltage-source …