US PATENT DOCUMENTS 5,407,845. A 4/1995 Nasu et al. 5,496,752 A 3, 1996 Nasu et al.
5,561,072 A 10, 1996 Saito 5,892.235 A 4/1999 Yamazaki et al. 5,897,346 A 4/1999 …

We evaluated the redistribution profiles of ion-implanted impurities during solid-phase
epitaxy using Rutherford backscattering spectrometry (RBS). RBS data revealed that the As …

In this paper, we study time-dependent dielectric breakdown in thin gate oxides and propose
a new methodology applicable to a wide range of gate stacks for extracting soft breakdown …

A new atomic force microscopy (AFM)-based technique named fast Fourier transform
scanning spreading-resistance microscopy (FFT-SSRM) has been developed. FFT-SSRM …

In this work, we analyzed the subthreshold current (I/sub D/) of pocket implanted MOSFETs
using extensive device simulations and experimental data. We present an analytical model …

The authors demonstrate high-performing n-channel transistors with a HfO/sub 2//TaN gate
stack and a low thermal-budget process using solid-phase epitaxial regrowth of the source …

This paper investigates the extraction of channel length from split current-voltage (CV)
measurements of small gate length PMOS transistors. Using device simulations, including …

US7407874B2 - Plasma doping method - Google Patents US7407874B2 - Plasma doping
method - Google Patents Plasma doping method Download PDF Info Publication number …

A plasma doping method, even though a plasma doping treatment is repeated, can make a
dose from a film to a silicon substrate uniform for each time. The method includes preparing …

A plasma doping method that can control a dose precisely is realized. In-plane uniformity of
the dose is improved. It has been found that, if a bias is applied by irradiating B 2 H 6/He …