On the “intrinsic” breakdown of thick gate oxide
KP Cheung - Journal of applied physics, 2022 - pubs.aip.org
The thick gate oxide breakdown mechanism has become an important topic again due to the
rising demand for power electronics. The failure of the percolation model in explaining the …
rising demand for power electronics. The failure of the percolation model in explaining the …
[HTML][HTML] A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities
We report on a model for the bipolar amplification effect (BAE), which enables defect density
measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an …
measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an …
Magnetic Field-Swept and Frequency-Swept Electrically Detected Magnetic Resonance Studies of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
JP Ashton - 2020 - search.proquest.com
Abstract 4H-SiC metal-oxide-semiconductor field-effect transistors are promising for high
power and high temperature applications but suffer from a relatively low effective channel …
power and high temperature applications but suffer from a relatively low effective channel …