Epitaxial oxides on semiconductors: from fundamentals to new devices
Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …
functionalities can range from high temperature superconductivity to multiferroicity and novel …
Precursors as enablers of ALD technology: Contributions from University of Helsinki
T Hatanpää, M Ritala, M Leskelä - Coordination Chemistry Reviews, 2013 - Elsevier
The review focuses on ALD precursors of selected elements such as alkaline earth (Mg, Ca,
Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These …
Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These …
[HTML][HTML] Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors
Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide
thin films with nanoscale thickness control. Most successful industrial applications have …
thin films with nanoscale thickness control. Most successful industrial applications have …
[HTML][HTML] Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications
The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential
high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by …
high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by …
Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates
MD McDaniel, A Posadas, TQ Ngo… - Journal of Vacuum …, 2013 - pubs.aip.org
Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD)
on Si (001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE) …
on Si (001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE) …
A chemical route to monolithic integration of crystalline oxides on semiconductors
This work demonstrates the growth of crystalline SrTiO3 (STO) directly on germanium via a
chemical method. After thermal deoxidation, the Ge substrate is transferred in vacuo to the …
chemical method. After thermal deoxidation, the Ge substrate is transferred in vacuo to the …
CFD Simulation of the Dosing Behavior within the Atomic Layer Deposition Feeding System
The effective operation of atomic layer deposition (ALD) feeding system is the premise of
realizing specific ALD processes. In the present work, a detailed computational fluid …
realizing specific ALD processes. In the present work, a detailed computational fluid …
Impact of Cationic Stoichiometry on Physical, Optical and Electrical Properties of SrTiO3 Thin Films Grown on (001)-Oriented Si Substrates
M Baryshnikova, A Boelen, L Ceccon, V Herreman… - Materials, 2024 - mdpi.com
In this study, we investigate the changes in the crystalline structure of MBE-deposited SrTiO3
layers on Si with different deviations from Sr/Ti stoichiometry as deposited but also after …
layers on Si with different deviations from Sr/Ti stoichiometry as deposited but also after …
Real-time spectroscopic ellipsometric investigation of adsorption and desorption in atomic layer deposition: A case study for the strontium bis (tri …
The atomic layer deposition (ALD) of SrO thin films from Sr (C 5 i Pr 3 H 2) 2 (g) and H 2 O
(g) was studied using real-time spectroscopic ellipsometry (SE) investigations of adsorption …
(g) was studied using real-time spectroscopic ellipsometry (SE) investigations of adsorption …
Silicon surface deoxidation using strontium oxide deposited with the pulsed laser deposition technique
The epitaxial growth of functional oxides on silicon substrates requires atomically defined
surfaces, which are most effectively prepared using Sr-induced deoxidation. The …
surfaces, which are most effectively prepared using Sr-induced deoxidation. The …