A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

By way of a brief review of Si photonics technology, we show that significant improvements
in device performance are necessary for practical telecommunications applications. In order …

A 300-mm silicon photonics platform for large-scale device integration was developed,
leveraging 40-nm complementary metal-oxide-semiconductor technology. Through …

We previously proposed a photonics-electronics convergence system to solve bandwidth
bottleneck problems among large-scale integrations (LSIs) and demonstrated a high …

This study reports the bandgap engineering of a Ge epitaxial layer on Si to tune the
operating wavelength of optical intensity modulators and photodetectors in the C (1.530 …

One of the most serious challenges facing exponential performance growth in the
information industry is the bandwidth bottleneck in interchip interconnects. We propose a …

A patterned Si substrate is used to reduce the threading dislocation density (TDD) in a Ge
epitaxial film for near-infrared photonic device applications. Using photolithography and dry …

We developed a high-speed and high efficiency MOS-capacitor-type Si optical modulator (Si-
MOD). We designed the optimum structure and demonstrated a very high modulation …

Enhanced optical absorption in the L band (1.565–1.625 μm) of optical communication is
reported for a Ge epitaxial layer grown on a Si-on-quartz (SOQ) wafer toward an extended …

Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are
fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the …