Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Ge (001) surface cleaning methods for device integration
Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …
Synthesis and characterization of hexagonal boron nitride as a gate dielectric
Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a
conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD …
conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD …
Metal-induced layer exchange of group IV materials
K Toko, T Suemasu - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor
layers exchange during heat treatment. A great deal of effort has been put into research on …
layers exchange during heat treatment. A great deal of effort has been put into research on …
[HTML][HTML] Berberine protects against 6-OHDA-induced neurotoxicity in PC12 cells and zebrafish through hormetic mechanisms involving PI3K/AKT/Bcl-2 and Nrf2/HO-1 …
Berberine (BBR) is a renowned natural compound that exhibits potent neuroprotective
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
The aim of this review paper is to describe the impact of so-called border traps (BTs) in high-
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications
High-quality compressive-strained Ge 1− x Sn x/Ge films have been deposited on Si (001)
substrate using a mainstream commercial chemical vapor deposition reactor. The growth …
substrate using a mainstream commercial chemical vapor deposition reactor. The growth …
Tetrahedral Structure Based on Triphenylgermanium for Quenching‐Resistant Multi‐Resonance Thermally Activated Delayed Fluorescence Emitters
HX Ni, JZ Zhu, JJ Hu, L Yuan, XJ Liao… - Advanced Optical …, 2024 - Wiley Online Library
The rigid planar architecture of multiple resonance thermally activated delayed fluorescence
(MR‐TADF) molecules employing boron/nitrogen (B/N) frameworks typically results in …
(MR‐TADF) molecules employing boron/nitrogen (B/N) frameworks typically results in …
N-type doping of Ge by As implantation and excimer laser annealing
The diffusion and activation of arsenic implanted into germanium at 40 keV with maximum
concentrations below and above the solid solubility (8× 10 19 cm− 3) have been studied …
concentrations below and above the solid solubility (8× 10 19 cm− 3) have been studied …
Modeling and in situ probing of surface reactions in atomic layer deposition
Atomic layer deposition (ALD) has matured into a preeminent thin film deposition technique
by offering a highly scalable and economic route to integrate chemically dissimilar materials …
by offering a highly scalable and economic route to integrate chemically dissimilar materials …