III-V semiconductors, of which gallium arsenide is the best known, have been important for
some years and appear set to become much more so in the future. They have principally …

The process of impurity‐induced layer disordering (IILD) or layer intermixing, in Al x Ga1− x
As‐GaAs quantum well heterostructures (QWHs) and superlattices (SLs), and in related III‐V …

Stripe-geometry quantum well heterostructure Al<SUB>x</SUB>Ga<SUB>1 - x</SUB>As-GaAs
lasers defined by defect diffusion - NASA/ADS Now on home page ads icon ads Enable full …

We report on the fabrication of index‐guided buried heterostructure lasers by the process of
silicon impurity‐induced disordering. This fabrication process for a buried heterostructure …

Page 1 PHOTONICS Y. Guo CK Kao EH Li KS Chiang Nonlinear Photonics Nonlinearities in
Optics, Optoelectronics and Fiber Communications Springer The Chinese University Press 184 …

Various applications of quantum-well intermixing, ranging from multiwavelength lasers to
complex photonic integrated circuits, are described. The fabrication of these GaAs-AlGaAs …

Two different quantum well heterostructure wafers are used to fabricate buried‐
heterostructure Al x Ga1− x As‐GaAs quantum well lasers using Si‐induced layer …

The use of Si diffusion and impurity-induced layer disordering, via a Si3N4 mask pattern, to
construct stripe-geometry AI" Ga. _xAs-GaAs quantum well heterostructure lasers on n-type …

Fast, sensitive, and selective fingerprint detection of organometallics, with emphasis on
dimethyltelluride CH3TeCH3, is described, using short and ultrashort pulse tunable dye …

Quantum well heterostructure (QWH) lasers have unique and desirable characteristics. A
review of a variety of QWH lasers, including infrared and visible, single and multiple stripe …