Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …

Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …

III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …

To reduce the threshold current density (J th) of ultraviolet (UV)-B AlGaN-based laser
diodes, we investigated the critical parameters aiming to increase the injection efficiency η i …

In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …

Aluminum gallium nitride (AlGaN)-based ultraviolet-B band laser diodes (LDs) with a p-type
AlGaN cladding layer using polarization doping were fabricated on lattice-relaxed Al 0.6 Ga …

We present an optical modeling and characterization study of prototype ultraviolet laser
diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of …

The space charge density profile of the nondoped AlGaN-based p-type cladding layer for UV-
C laser diodes realized by distributed polarization doping is examined theoretically and …