High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy

S Yue, F Tian, X Sui, M Mohebinia, X Wu, T Tong… - Science, 2022 - science.org
Semiconducting cubic boron arsenide (c-BAs) has been predicted to have carrier mobility of
1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt …

Application of Strain Engineering in Solar Cells

H Fei, C Shang, D Sang, C Li, S Ge, L Zou… - …, 2024 - pmc.ncbi.nlm.nih.gov
Solar cells represent a promising innovation in energy storage, offering not only exceptional
cleanliness and low cost but also a high degree of flexibility, rendering them widely …

First-principles predictions of Hall and drift mobilities in semiconductors

S Poncé, F Macheda, ER Margine, N Marzari… - Physical Review …, 2021 - APS
Carrier mobility is at the root of our understanding of electronic devices. We present a unified
methodology for the parameter-free calculations of phonon-limited drift and Hall carrier …

Novel two-dimensional β-GeSe and β-SnSe semiconductors: anisotropic high carrier mobility and excellent photocatalytic water splitting

Y Xu, K Xu, C Ma, Y Chen, H Zhang, Y Liu… - Journal of Materials …, 2020 - pubs.rsc.org
Photocatalytic water splitting is a promising method which uses sunlight to directly generate
hydrogen from water to meet the requirements of energy consumption. Inspired by the …

Highly Thermal-Conductive Cubic Boron Arsenide: Single-Crystal Growth, Properties, and Future Thin-Film Epitaxy

X Wen, M Wen, C Ye, S Yu, S Yue… - The Journal of …, 2025 - ACS Publications
Heat dissipation has become a critical challenge in modern electronics, driving the need for
a revolution in thermal management strategies beyond traditional packaging materials …

[HTML][HTML] Electronic, thermoelectric, transport and optical properties of MoSe2/BAs van der Waals heterostructures

Y Li, Z Feng, Q Sun, Y Ma, Y Tang, X Dai - Results in Physics, 2021 - Elsevier
The density functional theory (DFT) calculations were performed to systematically study the
geometrical, electronic, thermoelectric, transport and optical properties of MoSe 2/BAs van …

A first-principles study of 1D and 2D C60 nanostructures: strain effects on band alignments and carrier mobility

YB Shi, SH Lv, ZF Shao, HK Dong… - Journal of Physics …, 2023 - iopscience.iop.org
A first-principles study of 1D and 2D C60 nanostructures: strain effects on band alignments and
carrier mobility - IOPscience Skip to content IOP Science home Accessibility Help Search …

A MoS2/BAs heterojunction as photodetector

G Xiong, J Lu, R Wang, Z Lin, S Lu, J Li, Z Tong… - Materials Today …, 2024 - Elsevier
With high thermal conductivity and carrier mobility, cubic boron arsenide (BAs) shows huge
potential in high-power and high-speed optoelectronic devices. However, researches about …

[HTML][HTML] Optical properties of cubic boron arsenide

B Song, K Chen, K Bushick, KA Mengle, F Tian… - Applied Physics …, 2020 - pubs.aip.org
The ultrahigh thermal conductivity of cubic boron arsenide (BAs) makes it a promising
material for next-generation electronics and optoelectronics. Here, we report measured …

Dangling bonds, the charge neutrality level, and band alignment in semiconductors

JB Varley, JR Weber, A Janotti… - Journal of Applied …, 2024 - pubs.aip.org
We present a systematic study of the electronic properties of dangling bonds (DBs) in a
variety of semiconductors and examine the relationship between DBs and the charge …