(57) ABSTRACT A method for forming a sensor includes forming a base region barrier in
contact with a base substrate. The base region barrier includes a monocrystalline …

(57) ABSTRACT A configuration of a lateral transistor suited for the hybrid integration
(BiCMOS) of a high-performance lateral transis tor (HCBT) and a CMOS transistor, and a …

SUMMARY A sensor includes a collector, an emitter and a base-region barrier formed as an
inverted bipolar junction transistor hav ing a base Substrate forming a base electrode to …

US9064808B2 - Integrated circuit devices having features with reduced edge curvature and
methods for manufacturing the same - Google Patents US9064808B2 - Integrated circuit …

Bipolar junction transistor structures and methods for making the same are provide. The
method includes: providing a substrate with an insulator layer and a device layer over the …

The independent claims of this patent signify a concise description of embodiments.
Disclosed is technology, roughly described, in which a semiconductor structure includes a …

Consistent with an example embodiment, there is a bipolar transistor with a reduced
collector series resistance integrated in a trench of a standard CMOS shallow trench …

(57) ABSTRACT A structure, such as an integrated circuit device, is described that includes
a line of material with critical dimensions which vary within a distribution substantially less …

A lateral bipolar transistor includes an emitter region, a base region, a collector region, and
a gate disposed over the base region. A bias line is connected to the gate for applying a bias …

(57) ABSTRACT A structure, such as an integrated circuit device, is described that includes
a line of material with critical dimensions which vary within a distribution substantially less …