Micro-LED undoubtedly stands out as a highly anticipated technology when it comes to the
innovation of future display technologies. Micro-LED technology surpasses traditional …

This article provides an overview of recent development of sputtering method for high-quality
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …

GaN-based ultraviolet-light-emitting diodes (UV LEDs) with 375 nm emission were grown on
different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN …

Hexagonal aluminium nitride (AlN) thin films prepared by the reactive magnetron sputtering
method usually undergo post‐growth annealing treatment aimed at the improvement of …

The thickening behavior of aluminum scandium nitride (Al 0.88 Sc 0.12 N) films grown on Si
(111) substrates has been investigated experimentally using X-ray diffraction (XRD) …

The epitaxial growth of an AlN layer on a Si (111) substrate at room temperature by DC
magnetron sputtering was investigated. The predeposition of a 5-nm-thick Al layer on the Si …

Three kinds of ex situ low-temperature AlN (LT-AlN) templates grown on Si substrates by
pulsed laser deposition (PLD) are employed to grow GaN epitaxial films by metal organic …

An ex situ AlN seed layer was formed by physical vapor deposition (PVD) on a Si substrate,
aiming at the production of high-quality GaN on Si by metal–organic vapor-phase epitaxy. A …

The effect of an Al buffer layer on the growth of AlN on a Si (111) substrate was investigated
to develop an all-sputtered GaN film on a Si (111) template substrate. The X-ray diffraction …

Gallium nitride (GaN), aluminum nitride (AlN), and Al x Ga 1− x N films have been deposited
by hollow cathode plasma-assisted atomic layer deposition at 200 C on c-plane sapphire …