For the first time, CMOS TFTs of 65 nm channel length have been demonstrated by using a
novel microwave dopant activation technique. A low temperature microwave anneal is …

This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations
consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and …

Nowadays, the emergence of new technologies gives rise to a huge amount of data in
different fields such as public transportation, community services, scientific research, etc …

In this paper, electrical characteristics of small nanowire fin field-effect transistor (FinFET)
are investigated by using a three-dimensional quantum correction simulation. Taking …

We experimentally quantified, for the first time, the random dopant distribution (RDD)-
induced threshold voltage standard deviation up to 40 mV for 20-nm-gate planar …

Two-dimensional electron gas (2DEG) property is crucial for the performance of GaN-based
high electron mobility transistors (HEMTs). The 2DEG-related concentration and mobility can …

The impact of the number and position of discrete dopants on device characteristics is
crucial in determining the transient behavior of nanoscale circuits. An experimentally …

Tunnel field-effect transistors (TFETs) are the decent performance estimators in the
prospective of short-channel effects. In such structures, a small inter-gate separation (IGS) is …

As the dimension of semiconductor device shrunk into nanometer scale (nanoscale),
characteristic fluctuation is more pronounced, and become crucial for circuit design. In this …

The impact of the number and position of discrete dopants on device characteristics is
crucial in determining the behavior of nanoscale semiconductor devices. This study explores …