Surface characteristics of a dental implant modified by low energy oxygen ion implantation
Z Lin, SJ Li, F Sun, DC Ba, XC Li - Surface and Coatings Technology, 2019 - Elsevier
The good biocompatibility of Titanium-based medical device is related to the thin oxide layer
(titanium dioxide, TiO 2) formed on the surface. In this study, Plasma Immersion Ion …
(titanium dioxide, TiO 2) formed on the surface. In this study, Plasma Immersion Ion …
Optical properties and crystallinity of hydrogenated nanocrystalline silicon (nc-Si: H) thin films deposited by rf-PECVD
Hydrogenated nanocrystalline silicon (nc-Si: H) thin films prepared in a home-built radio-
frequency (rf) plasma enhanced chemical vapour deposition (PECVD) system have been …
frequency (rf) plasma enhanced chemical vapour deposition (PECVD) system have been …
Flexible free-standing graphene foam supported silicon films as high capacity anodes for lithium ion batteries
Silicon film was deposited onto free-standing graphene foam by chemical vapor deposition.
The resultant samples showed high flexibility and were used as anodes for lithium-ion …
The resultant samples showed high flexibility and were used as anodes for lithium-ion …
Role of Ar dilution of SiH4/PH3 gas mixture on PECVD based film growth process, hydrogen bonding configuration, and optical properties of n-type a-Si: H thin films
Amorphous silicon is considered as one of the most promising materials for solar cell
applications due to its enhanced optical absorption, high temperature coefficient of …
applications due to its enhanced optical absorption, high temperature coefficient of …
Mixed phase silicon thin films grown at high rate using 60 MHz assisted VHF-PECVD technique
Mixed phase amorphous and nanocrystalline silicon (a-Si: H and nc-Si: H) thin films were
deposited by VHF-PECVD (60 MHz) using Argon (Ar) as the diluent of silane. These …
deposited by VHF-PECVD (60 MHz) using Argon (Ar) as the diluent of silane. These …
The microstructure and optical properties of crystallized hydrogenated silicon films prepared by very high frequency glow discharge
D Wang, Z Yang, F Li, D He - Applied surface science, 2011 - Elsevier
A series of nc-Si: H films with different crystalline volume fractions have been deposited by
very high frequency glow discharge in a plasma with a silane concentration [SiH 4]/([SiH …
very high frequency glow discharge in a plasma with a silane concentration [SiH 4]/([SiH …
Silicon dioxide coating of titanium dioxide nanoparticles from dielectric barrier discharge in a gaseous mixture of silane and nitrogen
The coating of titanium dioxide nanoparticles with silicon dioxide has been carried out by
dielectric barrier discharge (DBD) plasma treatments to enhance the thermostability of …
dielectric barrier discharge (DBD) plasma treatments to enhance the thermostability of …
Single-and multiple-junction pin type amorphous silicon solar cells with pa-Si 1− x C x: H and nc-Si: H films
SM Iftiquar, JC Lee, J Lee, J Jang… - … From Fundamentals to …, 2012 - books.google.com
The pa-Si1-xCx: H alloy is popularly knows as a wide band gap semiconducting alloy. It was
demonstrated in the 1980s that application of the pa-Si1-xCx: H alloy leads to improved per …
demonstrated in the 1980s that application of the pa-Si1-xCx: H alloy leads to improved per …
Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma
L Zhang, J Gao, J Xiao, L Wen, J Gong… - physica status solidi …, 2012 - Wiley Online Library
Hydrogenated nanocrystalline silicon films (nc‐Si: H) have been deposited by the
decomposition of tetrachlorosilane (SiCl4) diluted with hydrogen (H2) and argon (Ar) by a …
decomposition of tetrachlorosilane (SiCl4) diluted with hydrogen (H2) and argon (Ar) by a …
Modification of structure and optical band-gap of nc-Si: H films with 30 and 196 MeV Kr-ions
Y Zhu, Z Wang, C Yao, J Sun, T Shen, K Wei… - Nuclear Instruments and …, 2013 - Elsevier
In the present work, experimental results on irradiation effects of 30 and 196MeV Kr-ions on
nc-Si: H films are presented. The irradiation fluences are 5.0× 1013, 1.0× 1014 and 2.0× …
nc-Si: H films are presented. The irradiation fluences are 5.0× 1013, 1.0× 1014 and 2.0× …