Wide spectral coverage (0.7–2.2 eV) lattice‐matched multijunction solar cells based on AlGaInP, AlGaAs and GaInNAsSb materials

A Aho, R Isoaho, M Raappana, T Aho… - Progress in …, 2021 - Wiley Online Library
We report on the progress in developing lattice‐matched GaAs‐based solar cells with focus
on developing AlGaInP, AlGaAs, and GaInNAsSb materials, aiming at achieving a wide …

Optical performance assessment of nanostructured alumina multilayer antireflective coatings used in III–V multijunction solar cells

J Reuna, A Hietalahti, A Aho, R Isoaho… - ACS Applied Energy …, 2022 - ACS Publications
The optical performance of a multilayer antireflective coating incorporating lithography-free
nanostructured alumina is assessed. To this end, the performance of single-junction GaInP …

[HTML][HTML] High performance low-bandgap (0.8 eV) single junction GaInNAsSb solar cells incorporating Au-based back surface reflectors

R Isoaho, T Aho, A Aho, A Tukiainen, J Reuna… - Solar Energy Materials …, 2022 - Elsevier
Low-bandgap GaInNAsSb single junction solar cells incorporating a planar Au back surface
reflector for enhancing the photocurrent generation are reported. In particular, a 700 nm …

Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

R Isoaho, A Aho, A Tukiainen, T Aho… - Solar Energy Materials …, 2019 - Elsevier
We demonstrate single junction GaInNAsSb solar cells with high nitrogen content, ie in the
range of 5–8%, and bandgap energies close to 0.7 eV grown by molecular beam epitaxy. A …

Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

A Gonzalo, AD Utrilla, U Aeberhard, V Braza… - Solar Energy Materials …, 2020 - Elsevier
We demonstrate type-II GaAsSb/GaAsN superlattices (SL) as a suitable structure to form the
lattice-matched 1.0–1.15 eV subcell that would allow the implementation of the optimum …

As-grown InGaAsN subcells for multijunction solar cells by molecular beam epitaxy

M Levillayer, A Arnoult, I Massiot… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
In this article, we investigate the molecular beam epitaxy growth of unannealed 1.12 eV
InGaAsN solar cells. The impact of the growth temperature, the As/III ratio and the bismuth …

[HTML][HTML] Bandgap energy model for GaInNAsSb/GaAs alloys with high N content and strain influence

R Isoaho, A Aho, A Tukiainen, T Salminen… - Journal of Crystal …, 2022 - Elsevier
Bandgap energy of dilute nitride GaInNAsSb/GaAs alloys with N compositions as high as
8% are estimated using a method based on band anti-crossing model used for …

Characterization of plasmonic scattering, luminescent down-shifting, and metal-enhanced fluorescence and applications on silicon solar cells

WJ Ho, JJ Liu, JC Chen - Nanomaterials, 2021 - mdpi.com
This paper studied characterized the plasmonic effects of silver nanoparticles (Ag-NPs), the
luminescent down-shifting of Eu-doped phosphor particles, and the metal-enhanced …

Segmented multi-junction solar cells: A new opportunity for cell design & optimization

CE Valdivia, K Hinzer - 2019 IEEE 46th Photovoltaic …, 2019 - ieeexplore.ieee.org
Multi-junction solar cell design can be enhanced using a process of subcell segmentation,
whereby each subcell is further sub-divided into multiple optically-thin pn junctions. This …

Research on monolithic AlGaInP/AlGaInAs/GaInAs/Ge quadruple-junction solar cell for high efficiency lattice-matched tandem photovoltaic device

X Zhang, S Huang, J Liu, K Lin, Y Wang… - Applied Physics …, 2020 - iopscience.iop.org
Abstract Lattice-matched AlGaInP/AlGaInAs/GaInAs/GaInNAs (Sb)/Ge five-junction (5J) solar
cell can be expected to achieve a practical efficiency high as 36% under the air mass (AM0) …