β-Ga2O3-Based Power Devices: A Concise Review

M Zhang, Z Liu, L Yang, J Yao, J Chen, J Zhang, W Wei… - Crystals, 2022 - mdpi.com
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Gallium oxide-based solar-blind ultraviolet photodetectors

X Chen, FF Ren, J Ye, S Gu - Semiconductor science and …, 2020 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …

Achieving highly efficient pH-universal hydrogen evolution by Mott-Schottky heterojunction of Co2P/Co4N

M Qin, L Chen, H Zhang, M Humayun, Y Fu… - Chemical Engineering …, 2023 - Elsevier
A vital step towards sustainable hydrogen production is to develop high-efficiency
electrocatalysts for pH-universal hydrogen evolution reaction (HER). Modulation of the …

A high-performance ultraviolet solar-blind photodetector based on a β-Ga 2 O 3 Schottky photodiode

Z Liu, X Wang, Y Liu, D Guo, S Li, Z Yan… - Journal of Materials …, 2019 - pubs.rsc.org
UV ray detection near the earth surface has become urgent due to the serious effects of UV
rays on human health, the environment and the biological evolution; therefore, the …

Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga2O3 Nanowires for DUV Photodetector and Image Sensor Application

C Xie, XT Lu, MR Ma, XW Tong… - Advanced Optical …, 2019 - Wiley Online Library
Photodetection in the solar‐blind deep‐ultraviolet (DUV) regime (200–280 nm) has received
significant attention for its many critical applications in military and civil areas. In this study, a …

[HTML][HTML] Energy-band alignments at ZnO/Ga2O3 and Ta2O5/Ga2O3 heterointerfaces by X-ray photoelectron spectroscopy and electron affinity rule

Z Liu, Y Liu, X Wang, W Li, Y Zhi, X Wang, P Li… - Journal of Applied …, 2019 - pubs.aip.org
Wide bandgap oxide semiconductors have been a hot topic in electronic and optoelectronic
technologies. The oxide heterojunctions provide many significant favorable properties in …

Flexible crystalline β-Ga 2 O 3 solar-blind photodetectors

J Lai, MN Hasan, E Swinnich, Z Tang… - Journal of Materials …, 2020 - pubs.rsc.org
This paper reports the fabrication of β-Ga2O3 nanomembrane (NM) based flexible
photodetectors (PDs) and the investigation of their optoelectrical properties under bending …

Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors

X Tang, KH Li, Y Zhao, Y Sui, H Liang… - … Applied Materials & …, 2021 - ACS Publications
The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been
realized on flexible substrates due to the limitations of high-temperature crystallization …

Anisotropic Electron Mobility and Contact Resistance of β-Ga2O3 Obtained via Radio Frequency Transmission Line Methods on Schottky Devices

HJ Kim, S Hong, C Jang, HJ Jin, H Woo, H Bae, S Im - ACS nano, 2024 - ACS Publications
Monoclinic semiconducting β-Ga2O3 has drawn attention, particularly because its thin film
could be achieved via mechanical exfoliation from bulk crystals, which is analogous to van …

Ultrawide-bandgap pn heterojunction of diamond/β-Ga2O3 for a solar-blind photodiode

H Kim, S Tarelkin, A Polyakov… - ECS Journal of Solid …, 2020 - iopscience.iop.org
The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored
because of the difficulty of forming a pn homojunction. In this study, a mixed-dimensional …