The effects of measurement technique and measurement conditions (eg, injection level,
temperature) on measured carrier lifetimes in n− 4H-SiC epilayers are investigated both …

We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …

This chapter briefly summarizes device-relevant material properties of the wide bandgap
semiconductor silicon carbide. The polytypes 4 H-, 6 H-and 3 C-SiC are predominantly …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

4H–SiC p+ non+-and p+ pon+-type diodes have been fabricated and evaluated as opening
switch devices which are known in Si to employ the effect of fast reverse current break after …

A simple analytical method is suggested to calculate the mobility of majority carriers in
semiconductors. The method allows one to adequately describe experimental data in a wide …

The possibility of a superfast (< 1 ns) termination of the reverse current during the recovery
of a 4H-SiC diode with ap+ p 0 n+ structure is experimentally demonstrated for the first time …

In this work different experimental current–voltage behaviours of several Al implanted 4H-
SiC p–i–n diodes are investigated by means of numerical simulations in a wide range of …

The open-circuit voltage decay (OCVD) method is a well-known technique for conducting
electrical measurements of carrier lifetime: the main advantages lie in the simple setup and …