Over four decades ago, pulsed-laser melting, or pulsed-laser annealing as it was termed at
that time, was the subject of intense study as a potential advance in silicon device …

Laser Annealing of Semiconductors deals with the materials science of surfaces that have
been subjected to ultrafast heating by intense laser or electron beams. This book is …

The annealing of semiconductors is of critical importance for successful electronic device
fabrication. The present review surveys the new field of transient annealing and covers all …

The observed dependence of spin relaxation on the identity of the donor atom in n-type
silicon has remained without explanation for decades and poses a long-standing open …

Explosive, or self-sustaining crystallization of amorphous thin films has been quite frequently
observed during the last century, I-16 and has recently been studied anew in connection …

Single crystal Si films have been epitaxially grown from chemical vapor-deposited poly-Si
films from 2000 to 6000 Å thick on (100) Si substrates by Q-switched ruby laser pulse …

Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond
pulsed Nd: YAG laser. The results indicate that at specific laser energy intensity levels, the …

Springer series in materials science Page 2 Springer Series in Materials Science Volume 91
Series Editors Robert Hull, Charlottesville, VA, USA Chennupati Jagadish, Canberra, ACT …

We have investigated the recrystallization of ion-implanted amorphous GaAs using a
frequency-doubled 1O-8-s pulsed Nd: YAG laser. The best results were obtained by spatially …

Explosive crystallization has been observed in thin, unsupported (free) films of amorphous
germanium irradiated with a focussed, moderately intense electron beam. Transmission …