[HTML][HTML] Silicon carbide photonic crystal cavities with integrated color centers
G Calusine, A Politi, DD Awschalom - Applied Physics Letters, 2014 - pubs.aip.org
The recent discovery of color centers with optically addressable spin states in 3C silicon
carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the …
carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the …
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
In this work, we present the creation and characterisation of single photon emitters at the
surface of 4H-and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be …
surface of 4H-and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be …
Effective synthesis of silicon carbide nanotubes by microwave heating of blended silicon dioxide and multi-walled carbon nanotube
Silicon carbide nanotube (SiCNTs) has been proven as a suitable material for wide
applications in high power, elevated temperature and harsh environment. For the first time …
applications in high power, elevated temperature and harsh environment. For the first time …
Exceptional fabrication of dead-weight-free silicon and graphitic heterostructures anodes for the next advancement of Li-ion batteries
Silicon (Si)-graphite and graphite (without Si) anodes for Li-ion batteries are developed at
ambient conditions through the direct irradiation of CO 2 laser, resulting in avoiding the use …
ambient conditions through the direct irradiation of CO 2 laser, resulting in avoiding the use …
Cavity-enhanced measurements of defect spins in silicon carbide
G Calusine, A Politi, DD Awschalom - Physical Review Applied, 2016 - APS
The identification of new solid-state defect-qubit candidates in widely used semiconductors
has the potential to enable the use of nanofabricated devices for enhanced qubit …
has the potential to enable the use of nanofabricated devices for enhanced qubit …
Integration of single-photon emitters into 3C-SiC microdisk resonators
We demonstrate the integration of bright, fully polarized single-photon emitters readily
created by thermal oxidation of cubic silicon carbide (SiC) into microdisk resonators. The …
created by thermal oxidation of cubic silicon carbide (SiC) into microdisk resonators. The …
Linear integrated optics in 3C silicon carbide
The development of new photonic materials that combine diverse optical capabilities is
needed to boost the integration of different quantum and classical components within the …
needed to boost the integration of different quantum and classical components within the …
Imaging with nanometer resolution using optically active defects in silicon carbide
Nanostructured and bulk silicon carbide (Si C) materials are relevant for electronics, nano-
and micromechanical systems, and biosensing applications. Si C has recently emerged as …
and micromechanical systems, and biosensing applications. Si C has recently emerged as …
[HTML][HTML] Impact of alternating precursor supply and gas flow on the LPCVD growth behavior of polycrystalline 3C-SiC thin films on Si
P Moll, G Pfusterschmied, S Schwarz… - Sensors and Actuators A …, 2024 - Elsevier
In this paper, we will provide information on the growth mechanism of 3C-SiC using
alternating supply deposition (ASD). SiH 4 and C 3 H 8 were introduced successively in a …
alternating supply deposition (ASD). SiH 4 and C 3 H 8 were introduced successively in a …
Carbonization and transition layer effects on 3C-SiC film residual stress
R Anzalone, G Litrico, N Piluso, R Reitano… - Journal of Crystal …, 2017 - Elsevier
In this work an extended study of the carbonization process of the silicon surface and of a
low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has …
low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has …