This article presents a brief review of the research progress achieved in the field of
aluminium nitride (AlN) metastable cubic modifications synthesis. It covers mainly the …

Cubic nitrides are candidate materials for next-generation optoelectronic applications as
they possess no internal fields and promise to cover large parts of the electromagnetic …

In this single work to cover the use of plasma as nanofabrication tool in sufficient depth
internationally renowned authors with much experience in this important method of …

We report single dot spectroscopy of cubic GaN/AlN self-assembled quantum dots. Typical
linewidths of the zero-phonon line between 2 and 8meV are observed and interpreted in …

In this work, we report on the stabilization of 3C-AlN polytype by molecular-beam epitaxy
(MBE) on 3 C-SiC∕ Si (111) pseudosubstrates. The main purpose of the present studies is …

The electron states confined in wurtzite InxGa1− xN/GaN-strained quantum dots (QDs) have
been investigated in the effective-mass approximation by solving the Schrödinger equation …

Zinc-blende GaN quantum dots were grown on 3C-AlN (001) by a vapor–liquid–solid
process in a molecular beam epitaxy system. We were able to control the density of the …

Abstract Zinc‐blende GaN/AlN quantum dots were grown in a molecular beam epitaxy
system by two alternative methods. In method A the quantum dots were formed by the …

Gallium nitride (GaN) is one of important functional materials for optoelectronics and
electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural …

We analyzed the cathodoluminescence of zinc‐blende GaN/AlN quantum dots grown by two
different methods. Method A being droplet epitaxy, a vapor liquid solid process and method …