Thermal-Dynamic analysis research on the designed Impingement-Jet Double-Layer nested microchannel heat sinks with vertical truncated bifurcation
The heat flux density of modern micro devices is far greater than the heat dissipation
capacity of traditional cooling methods. In order to further improve the comprehensive …
capacity of traditional cooling methods. In order to further improve the comprehensive …
The optimization and analysis of a triple-fin heterostructure-on-insulator fin field-effect transistor with a stacked high-K configuration and 10 nm channel length
P Saha, R Sankar Dhar, S Nanda, K Kumar… - Nanomaterials, 2023 - mdpi.com
The recent developments in the replacement of bulk MOSFETs with high-performance
semiconductor devices create new opportunities in attaining the best device configuration …
semiconductor devices create new opportunities in attaining the best device configuration …
Development and analysis of a three-fin trigate Q-FinFET for a 3 nm technology node with a strained-silicon channel system
Multi-gate field effect transistors (FETs) such as FinFETs are severely affected by short-
channel effects (SCEs) below 14 nm technology nodes, with even taller fins incurring …
channel effects (SCEs) below 14 nm technology nodes, with even taller fins incurring …
Electrothermal Modeling of Multi-Nanosheet FETs With Various Layouts
W Kwon, C Yoo, J Jeon - IEEE Transactions on Electron …, 2024 - ieeexplore.ieee.org
In this study, we propose a highly accurate and rapidly analyzable electrothermal modeling
for the observed self-heating effect (SHE) characteristics in multinanosheet FETs (mNS …
for the observed self-heating effect (SHE) characteristics in multinanosheet FETs (mNS …
Exploration and analysis of n-FinFET implementing stacked high-K at 08 nm gate length
FinFETs ensured the continuation of semiconductor industry with reliable, high performance
and low power devices fabricated at sub-100 nm technology nodes. These FinFETs are able …
and low power devices fabricated at sub-100 nm technology nodes. These FinFETs are able …
Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation
Temperature, doping concentration, and gate work function all have a significant impact on
performance of transistor during miniaturization. The design and in-depth investigation of a …
performance of transistor during miniaturization. The design and in-depth investigation of a …
Design and Performance Analysis of 3-Fin 08 nm Physical Gate Length SOI FinFETs Employing Gate Stacked High-K Dielectrics
The continuation of the scaling of FinFETs in the nano regime guaranteed the continuance
of semiconductor industry with the fabrication of reliable, high performance and low power …
of semiconductor industry with the fabrication of reliable, high performance and low power …
[PDF][PDF] Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System. Nanomaterials 2023, 13 …
Multi-gate field effect transistors (FETs) such as FinFETs are severely affected by
shortchannel effects (SCEs) below 14 nm technology nodes, with even taller fins incurring …
shortchannel effects (SCEs) below 14 nm technology nodes, with even taller fins incurring …