Device Design of 30 and 10 nm Triple Gate Single Finger Fin-FET for on Current (ION) and off Current (IOFF) Measurement
SM Jagtap, VJ Gond - … Techniques and Applications: Proceedings of the …, 2021 - Springer
Nowadays, users need portable gadgets like laptops and cellular phones with small in size
which occupies less area, consumes low power and having low cost. Justifying Moore's law …
which occupies less area, consumes low power and having low cost. Justifying Moore's law …
Performance Parameter Evaluation of 7nm FinFET by Tuning Metal Work Function and High K Dielectrics
SM Jagtap, VJ Gond - International Journal of Natural Computing …, 2021 - igi-global.com
The scrambling of MOSFET below 22nm, 14nm, unwanted Short Channel Effects (SCE) like
punch through, drain-induced barrier lowering (DIBL), along with huge leakage current are …
punch through, drain-induced barrier lowering (DIBL), along with huge leakage current are …