Nanoscale imaging of phonon dynamics by electron microscopy
Spatially resolved vibrational mapping of nanostructures is indispensable to the
development and understanding of thermal nanodevices, modulation of thermal transport …
development and understanding of thermal nanodevices, modulation of thermal transport …
GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
Abstract Dilute bismides (% Bi∼ 1%–3%) are excellent candidates for the fabrication of
optoelectronic devices, thanks to the strong reduction in the bandgap with increasing …
optoelectronic devices, thanks to the strong reduction in the bandgap with increasing …
Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers
S Pūkienė, M Karaliūnas, A Jasinskas… - …, 2019 - iopscience.iop.org
Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …
[HTML][HTML] Droplet induced compositional inhomogeneities in GaAsBi
CR Tait, L Yan, JM Millunchick - Applied Physics Letters, 2017 - pubs.aip.org
Compositional inhomogeneities in III-V alloys heavily influence the device performance. This
work presents evidence for Ga droplets inducing inhomogeneities in the Bi composition …
work presents evidence for Ga droplets inducing inhomogeneities in the Bi composition …
Improving the photovoltaic properties of GaAs/GaAsBi pin diodes by inserting a compositionally graded layer at the hetero-interface
H Kawata, S Hasegawa, H Nishinaka… - Semiconductor …, 2022 - iopscience.iop.org
We investigated the effect of inserting a compositionally graded layer at the GaAsBi/GaAs
interface on the photovoltaic and light-emission properties of GaAs/GaAsBi pin diodes …
interface on the photovoltaic and light-emission properties of GaAs/GaAsBi pin diodes …
Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies
InAsBi dilute alloys are potential new candidates for the improvement of infrared
optoelectronic devices such as photodetectors or lasers. In this work, InAsBi/InAs …
optoelectronic devices such as photodetectors or lasers. In this work, InAsBi/InAs …
[HTML][HTML] Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods
TBO Rockett, NA Adham, F Harun, JPR David… - Journal of Crystal …, 2022 - Elsevier
In this work, we demonstrate the MBE growth of a systematic series of GaAsBi/GaAs multiple
quantum well devices with up to 120 periods and report on their structural and optical …
quantum well devices with up to 120 periods and report on their structural and optical …
Optical properties of n-and p-type modulation doped GaAsBi/AlGaAs quantum well structures
In this work, optical properties of n-and p-type modulation doped GaAsBi/AlGaAs single
quantum well (QW) heterostructures are investigated via temperature-and excitation power …
quantum well (QW) heterostructures are investigated via temperature-and excitation power …
Strain stabilization of far from equilibrium GaAsBi films
GaAs 1− x Bi x was grown on GaAs and InGaAs underlayers to determine the effect of global
strain on bismuth (Bi) incorporation. Reducing compressive strain aids in Bi incorporation …
strain on bismuth (Bi) incorporation. Reducing compressive strain aids in Bi incorporation …