Disclosed are methods for etching a silicon-containing film to form a patterned structure,
methods for reinforcing and/or strengthening and/or minimizing damage of a patterned mask …

Process integration techniques are disclosed that use a carbon fill layer during formation of
self-aligned structures. A carbon layer may be placed over an etch stop layer. A cap layer …

Structures for a field-effect transistor and methods of form ing a field-effect transistor. A
sidewall spacer is arranged adjacent to a sidewall of a gate electrode, a source/drain region …

A method of forming an integrated circuit structure includes forming an etch stop layer over a
conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in …

In certain embodiments, a method for processing a semiconductor substrate includes
receiving a semiconductor substrate that includes a nitride etch stop layer aligned to a gate …

US11735477B2 - Method of semiconductor integrated circuit fabrication - Google Patents
US11735477B2 - Method of semiconductor integrated circuit fabrication - Google Patents Method …