2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Transistors based on two-dimensional materials for future integrated circuits

S Das, A Sebastian, E Pop, CJ McClellan… - Nature …, 2021 - nature.com
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors

Y Xu, T Liu, K Liu, Y Zhao, L Liu, P Li, A Nie, L Liu… - Nature Materials, 2023 - nature.com
Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-
generation field-effect transistors (FETs). However, it remains challenging to integrate …

The future of two-dimensional semiconductors beyond Moore's law

KS Kim, J Kwon, H Ryu, C Kim, H Kim, EK Lee… - Nature …, 2024 - nature.com
The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

High-κ perovskite membranes as insulators for two-dimensional transistors

JK Huang, Y Wan, J Shi, J Zhang, Z Wang, W Wang… - Nature, 2022 - nature.com
The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …

2D materials for future heterogeneous electronics

MC Lemme, D Akinwande, C Huyghebaert… - Nature …, 2022 - nature.com
Graphene and two-dimensional materials (2DM) remain an active field of research in
science and engineering over 15 years after the first reports of 2DM. The vast amount of …

A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications

AE Naclerio, PR Kidambi - Advanced Materials, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN) is a layered inorganic synthetic crystal exhibiting high
temperature stability and high thermal conductivity. As a ceramic material it has been widely …

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

A Mondal, C Biswas, S Park, W Cha, SH Kang… - Nature …, 2024 - nature.com
Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …

The development of integrated circuits based on two-dimensional materials

K Zhu, C Wen, AA Aljarb, F Xue, X Xu, V Tung… - Nature …, 2021 - nature.com
Abstract Two-dimensional (2D) materials could potentially be used to develop advanced
monolithic integrated circuits. However, despite impressive demonstrations of single devices …

Printed transistors made of 2D material-based inks

S Conti, G Calabrese, K Parvez, L Pimpolari… - Nature Reviews …, 2023 - nature.com
Large-area electronics for the Internet of Things requires a new generation of light-weight,
flexible, low-power electronics, based on advanced materials able to provide high …