Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the …
Y Xu, T Liu, K Liu, Y Zhao, L Liu, P Li, A Nie, L Liu… - Nature Materials, 2023 - nature.com
Abstract Two-dimensional (2D) semiconductors are promising channel materials for next- generation field-effect transistors (FETs). However, it remains challenging to integrate …
The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …
The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …
Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of …
Hexagonal boron nitride (h‐BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely …
Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such …
Abstract Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices …
Large-area electronics for the Internet of Things requires a new generation of light-weight, flexible, low-power electronics, based on advanced materials able to provide high …