The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

We report on the electrical performance comparison of Au-based and Au-free AlGaN/GaN
high electron mobility transistors (HEMTs) on silicon (Si). The chemical composition of both …

Abstract An AlGaN/GaN high electron mobility transistor (HEMT) using the magnetron
sputter to deposit silicon nitride (SiN) passivation layer is proposed in this paper. The AlGaN …

In this work, a dramatic reduction in current collapse is achieved in GaN-based high-electron-
mobility transistors (HEMTs) using dual-layer SiN x stressor passivation (DSSP), and the …

In this work, a comprehensive technology computer aided design-based investigation of a
buffer-free high electron mobility transistor under proton radiation is presented. With a …

In this work, we present the novel application of SiNx stress-engineering techniques for the
suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors …

In this work, we present a physics-based analysis of two-dimensional electron gas (2DEG)
sheet carrier density and other microwave characteristics such as transconductance and …

Recess processes for the fabrication of normally-off GaN HEMTs generally compromise
devices' on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with …

Strain engineering has proven to be a useful technique for enhancing the performance of
many modern-day transistors. Stress engineering can also have a non-trivial effect on the …

In the semiconductor industry, plasma enhanced atomic layer etching (PEALE) has attracted
significant attention due to its potential for high quality etch in nanometer-scale and high …