Speeding up the unique assets of atomic layer deposition

D Munoz-Rojas, T Maindron, A Esteve, F Piallat… - Materials Today …, 2019 - Elsevier
Atomic layer deposition (ALD) has been traditionally regarded as an extremely powerful but
slow thin-film deposition technique. The (perceived) limitation in terms of deposition rate has …

Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps

R Vallat, R Gassilloud, B Eychenne… - Journal of Vacuum …, 2017 - pubs.aip.org
In this paper, a new route for a selective deposition of thin oxide by atomic layer deposition
is discussed. The proposed process is using super cycles made of an additional plasma …

Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

R Vallat, R Gassilloud, O Salicio, K El Hajjam… - Journal of Vacuum …, 2019 - pubs.aip.org
A selective deposition process for bottom-up approach was developed in a modified plasma
enhanced atomic layer deposition (PEALD) sequence. As a case study, a very standard …

Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break

F Piallat, R Gassilloud, P Caubet… - Journal of Vacuum Science …, 2016 - pubs.aip.org
Due to the reduction of the thickness of the layers used in the advanced technology nodes,
there is a growing importance of the surface phenomena in the definition of the general …

Vertical Inner Gate Transistors for 4F2 DRAM Cell

KK Min, S Hwang, JH Lee… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we propose a novel cell transistor structure to facilitate the mass production of
4F 2 dynamic random access memory (DRAM). 3-D TCAD simulation results show that the …

超导量子芯片硅穿孔填充技术

郑伟文, 栾添, 张祥 - 科技导报, 2024 - kjdb.org
超导量子计算是目前最有可能实现实际应用的量子计算方案之一, 多层堆叠是实现超导量子比特
大规模扩展的最佳方案. 介绍了超导量子芯片中硅穿孔(TSV) 填充工艺的特点并汇总概括了当前 …

Alternative deposition solution for cost reduction of TSV integration

J Vitiello, F Piallat, L Bonnet - International Symposium on …, 2017 - meridian.allenpress.com
As one of the key enabler of 3D integration, Through Silicon Via (TSV) was widely
investigated but not largely adopted in the advanced packaging industry. At the present time …

Through silicon via filling technologies in superconducting quantum

W ZHENG, T LUAN, X ZHANG - Science & Technology Review, 2024 - kjdb.org
Superconducting quantum is one of the leading candidates in the race to build a quantum
computer and multi-layer stacking may be the best solution for the superconducting qubits …

[PDF][PDF] Materials Today Chemistry

D Muñoz-Rojas, T Maindron, A Esteve, F Piallat… - Materials …, 2019 - scholar.archive.org
abstract Atomic layer deposition (ALD) has been traditionally regarded as an extremely
powerful but slow thinfilm deposition technique. The (perceived) limitation in terms of …

[引用][C] Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition

D Geringswald, B Hintze - International Journal of Chemical and Molecular …, 2016