Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors
This work explores the atomic-scale nature of defects within hafnium dioxide/silicon
dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are …
dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are …
Odyssey of the charge pumping technique and its applications from micrometric-to atomic-scale era
B Djezzar - Journal of Applied Physics, 2023 - pubs.aip.org
This paper reviews the evolution of the charge pumping (CP) technique and its applications
from the micrometer-scale to the atomic-scale device era. We describe the more significant …
from the micrometer-scale to the atomic-scale device era. We describe the more significant …
Application of Charge Pumping Technique for MOSFET Devices Reliability
B Djezzar - 2023 IEEE 33rd International Conference on …, 2023 - ieeexplore.ieee.org
In this paper, we present an overview of charge-pumping technique (CPT) and its
applications in field-effect transistors (FET) reliability during couple of decades, giving …
applications in field-effect transistors (FET) reliability during couple of decades, giving …