Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

Recent development of technology and understanding of the growth mechanism in
heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow …

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

GaN films having distinct p-type conductivity, with hole concentration up to 4× 10 16 cm 3 at
RT, have been achieved for the first time. Samples were grown by MOVPE on a sapphire …

Marked improvements in the crystalline quality of GaN enabled the production of GaN-based
p–n junction blue-light-emitting and violet-laser diodes. These robust, energetically efficient …

Publisher Summary This chapter provides an overview of the basic issues involving the
materials used for high-brightness light emitting diodes (LEDs). It lays the fundamental …

Different techniques for epitaxial growth of gallium nitride and main properties of GaN layers
as well as devices made on the base of GaN-structures are described in the review. A new …

Nobel Lecture: Fascinated journeys into blue light Page 1 Nobel Lecture: Fascinated journeys
into blue light * Isamu Akasaki Meijo University, 1-501 Shiogama-guchi, Tempaku-ku, Nagoya …

The blue and ultraviolet photoluminescence bands in Mg-doped GaN have been
investigated over a wide range of temperatures and excitation intensities. Redshifts of the …