A semiconductor device includes a substrate, a plurality of nanowires, a gate structure, a
source/drain epitaxy structure, and a semiconductor layer. The substrate has a protrusion …

(57) ABSTRACT A semiconductor device include: a substrate; a 1st transistor formed above
the substrate, the 1st transistor including a 1st channel set of a plurality of 1st nanosheet …

Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the
transistors have different threshold voltages (V.). In some examples, a gate electrode of the …

(57) ABSTRACT A semiconductor device structure is provided. The semicon ductor device
structure includes a first device formed over a substrate, and the first device includes a first …

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …

A semiconductor device includes a substrate; a 1 st transistor formed above the substrate,
and having a 1 st transistor stack including a plurality of 1 st channel structures, a 1 st gate …

(57) ABSTRACT A semiconductor device include: a substrate; a 1" transistor formed above
the substrate, the 1" transistor including a 1" channel set of a plurality of 1" nanosheet layers …

2022-06-21 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD …

A semiconductor device includes a lower channel pattern and an upper channel pattern
stacked on a substrate in a first direction perpendicular to a top surface of the substrate …

An array of multi-stack transistor structures is provided, wherein the multi-stack transistor
structures are arranged in a plurality of rows and a plurality of columns in the array, wherein …