Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …
since it is strongly desired in various high-efficiency applications ranging from …
In situ characterization of interfaces relevant for efficient photoinduced reactions
Solar energy conversion and photoinduced bioactive sensors are representing topical
scientific fields, where interfaces play a decisive role for efficient applications. The key to …
scientific fields, where interfaces play a decisive role for efficient applications. The key to …
Femtosecond cooling of hot electrons in CdSe quantum-well platelets
P Sippel, W Albrecht, JC van der Bok… - Nano Letters, 2015 - ACS Publications
Semiconductor quantum wells are ubiquitous in high-performance optoelectronic devices
such as solar cells and lasers. Understanding and controlling of the (hot) carrier dynamics is …
such as solar cells and lasers. Understanding and controlling of the (hot) carrier dynamics is …
Time-resolved in situ spectroscopy during formation of the GaP/Si (100) heterointerface
Though III–V/Si (100) heterointerfaces are essential for future epitaxial high-performance
devices, their atomic structure is an open historical question. Benchmarking of transient …
devices, their atomic structure is an open historical question. Benchmarking of transient …
Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces
The atomic and electronic band structures of GaP/Si (001) heterointerfaces were
investigated by ab initio density functional theory calculations. Relative total energies of …
investigated by ab initio density functional theory calculations. Relative total energies of …
[HTML][HTML] Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces
We demonstrate an all-optical approach to probe electronic band structure at buried
interfaces involving polar semiconductors. Femtosecond optical pulses excite coherent …
interfaces involving polar semiconductors. Femtosecond optical pulses excite coherent …
Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si (100)
Energy storage is a key challenge in solar-driven renewable energy conversion. We
promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si …
promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si …
Formation of GaP/Si (100) heterointerfaces in the presence of inherent reactor residuals
Adequate silicon preparation is a prerequisite for defect-free III–V growth on Si. We transfer
the silicon processing from clean to GaP containing metalorganic vapor phase epitaxy …
the silicon processing from clean to GaP containing metalorganic vapor phase epitaxy …
A route to obtaining low-defect III–V epilayers on Si (100) utilizing MOCVD
Low-defect III–V multilayer structures grown on Si (100) open opportunities for a wide range
of cost-effective high-performance photovoltaic and optoelectronic devices. For that,(Al) GaP …
of cost-effective high-performance photovoltaic and optoelectronic devices. For that,(Al) GaP …
GaAsP/Si tandem solar cells: In situ study on GaP/Si: As virtual substrate preparation
A Paszuk, O Supplie, B Kim, S Brückner… - Solar Energy Materials …, 2018 - Elsevier
Realization of high efficiency III-V-on-Si solar cells requires preparation of an oxygen free Si
substrate surface, which allows for subsequent antiphase domain free III-V epitaxy. For …
substrate surface, which allows for subsequent antiphase domain free III-V epitaxy. For …