This Report reviews the use of molecular-beam reactive scattering to study the surface
reactions of gas molecules on semiconductors which have relevance to microelectronic …

▪ Abstract It is technologically important to understand how halogens react with
semiconductor surfaces because halogen compounds are commonly used to etch …

Molecular dynamics simulations were performed on low‐energy argon‐ion bombardment
(200, 50, and 20 eV) of silicon layers with varying amounts of fluorine incorporated. At low …

Jacket illustration. CryoSEM micrograph of a freeze-fractured yeast cell. Specimen was
prepared according to Walther et al (1995) and imaged using back-scattered electrons …

Updated interatomic potential energy functions for Si–F and Si–Cl are used in molecular
dynamics simulations of spontaneous etching of Si. Steady halogen uptake and …

The temperature dependence of the Si (100)/XeF2 etch reaction is studied quantitatively in a
molecular beam setup. At a sample temperature of 150 K the reaction probability reaches …

The interaction of energetic fluorine atoms with a fluorinated silicon surface has been
studied by monitoring energy and angular distributions of scattered fluorine atoms. Two …

Plasma etching is a relatively new technique in the fabrication of integrated circuits. It was
introduced in the seventies, mainly for stripping resists. In the eighties, plasma etching …

Harold F. Winters, DB Graves, D. Humbird, Sven Tougaard; Penetration of fluorine into the
silicon lattice during exposure to F atoms, F 2⁠, and Xe F 2⁠: Implications for spontaneous …

The etching of Si (100) is studied quantitatively in a molecular beam setup. After exposing
the silicon surface to XeF2 doses between 102 and 104 monolayers (MLs) of XeF2, thermal …