The performance of Static Nanomaterials Random-Access Memories (SRAMs) is often
degraded in the sub-threshold region as it is susceptible to increased access energy and …

Cells for Random Access Memory (RAM) are extensively utilized in many modern electronic
devices. One of the difficult aspects of building Static Random Access Memory (SRAM) cells …

Low power VLSI circuit design faces the challenging issues of static power dissipation as
transistor count doubles for every couple of years. static power dissipation also known as …

Random Access Memory (RAM) cells find extensive applications in diverse digital electronic
systems. In the realm of Static Random Access Memory (SRAM) cells, minimizing power …

In the current state of the technical environment, power optimization, delay reduction, and
leakage minimization are of the utmost importance. This is especially true as the industry …

The excessive power usage in modern digital equipment is triggered by memory arrays,
mainly including Static Random‐Access Memory (SRAM) chips. Many scientists are working …

By 2020, CMOS (complementary metal-oxide semiconductor) technology will be obsolete,
and Post Moore law technology will be vying for low-power, high-speed operation. With both …

This work presents a comparative analysis of the performance characteristics exhibited by
two established SRAM cell topologies, namely the conventional 6 and the 7 transistor …

This chapter describes the implementation and analysis of cache memory design for single
bit architecture comprised of six transistors static random access memory cell, a circuit of …

This article offers a revolutionary design for a 14T SRAM bit cell that makes use of carbon
nanotube field-effect transistors (CNTFETs) in order to strike a compromise between speed …