Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Chip-scale integrated light sources are a crucial component in a broad range of photonics
applications. III–V semiconductor nanowire emitters have gained attention as a fascinating …

We demonstrate high yield vapor–liquid–solid (VLS) growth of⟨ 100⟩-oriented InP
nanowire arrays. The highest yield (97%) is obtained when the catalyst droplet is filled with …

III–V semiconductor nanowires offer potential new device applications because of the
unique properties associated with their 1D geometry and the ability to create quantum wells …

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform
would open many avenues in silicon-based photonics, quantum technologies and energy …

Semiconductor nanowires composed of III–V materials have enormous potential to add new
functionality to electronics and optical applications. However, integration of these promising …

Rational bottom-up assembly of nanowire networks may be a way to successfully continue
the miniaturization, which is the main driving force behind the semiconductor industry. So …

Discovered almost two decades ago, the solution–liquid–solid (SLS) method for
semiconductor nanowire synthesis has proven to be an important route to high-quality …

Growth of III–V nanowires on the [100]-oriented industry standard substrates is critical for
future integrated nanowire device development. Here we present an in-depth analysis of the …