With the increase in the demand for high-speed transmission communication, satellite
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …

To accommodate growing user demand for faster data rates and extensive connectivity,
modern wireless communication systems must evolve to support a sharply increasing …

This paper presents the design, electromagnetic simulation strategies and experimental
characterisation of a two‐stage stacked‐FET cell in a 100 nm GaN on Si technology around …

We present the design and development of a Ka-band Doherty power amplifier (DPA) that
achieves high efficiency at power backoff (PBO) using a new load modulation scheme and a …

A two-stage Ka-band Doherty power amplifier (DPA) using a stacked field-effect transistor
(FET) cell is presented. We demonstrate, for the first time, the two critical parameters in a …

In this paper, we present the design of an ultracompact monolithic millimeter-wave
integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …

This paper presents the design of a dual-band power amplifier (PA) featuring similar
performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) …

In this article, a wideband linearization technique for distributed amplifiers (DAs) is
presented. In particular, an auxiliary transistor is employed to create additional …

This article presents a fully integrated K-/K a-band transformer-combined power amplifier
(PA) with a novel inductive neutralization technique implemented in the 90-nm CMOS …

We present a stacked-FET monolithic millimeter-wave (mmW) integrated circuit Doherty
power amplifier (DPA). The DPA employs a novel asymmetrical stack gate bias to achieve …