Graphene exhibits superior mechanical strength, high thermal conductivity, strong light–
matter interactions, and, in particular, exceptional electronic properties. These merits make …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Since the very inception of integrated circuits, dissimilar materials have been used for
fabricating devices and interconnects. Typically, semiconductors are used for devices and …

We investigate the direct band-to-band tunneling (BTBT) in a reverse biased molybdenum
disulfide (MoS 2) nanoribbon pn junction by analyzing the complex band structure obtained …

We report the results of simulating a dual-gated grapheme nanoribbon field-effect transistor
(GNR-FET) working in the ballistic regime, when its channel is under various tensile uniaxial …

The role of uniaxial strain in armchair, T-graphene nanoribbons (ATGNRs) with symmetric
and asymmetric structures is investigated using a nearest-neighbour, tight-binding (TB) …

In this paper, a top-gated Germanene nanoribbon field effect transistor (GeNR-FET) with and
without applying a compressive strain is investigated. Three strain strengths (ε= 3%, 5% and …

We present a numerical study on the performance of strained graphene-based field-effect
transistors. A local strain less than 10% is applied over a central channel region of the …

Based on the density functional theory in combination with the nonequilibrium Green's
function formalism, we study the structural, electronic, and transport properties of SS-pSiC 2 …

This study investigates the effects of a structural defect, specifically a single vacancy (SV), on
the performance of bilayer armchair graphene nanoribbon tunnel field-effect transistors (BL …