Nonvolatile phase-change memory has been successfully commercialized, but further
density scaling below 10 nanometers requires compositionally and structurally …

Cross-point array architecture offers a path toward low-cost storage-class memory (SCM).
However, it requires a selector, such as an ovonic threshold switch (OTS) in series with the …

In the past decade, there has been tremendous progress in integrating chalcogenide phase-
change materials (PCMs) on the silicon photonic platform for non-volatile memory to …

The success of memory technology is of vital importance in order to handle emerging mass
amount of data in our daily lives. Let us take one example here: The IBM summit is the …

Parallel thin-film transistor-phase-change memory (TFT-PcRAM) is a next-generation large-
capacity nonvolatile memory with a vertically integrated structure. Planar In-Ga-Zn-O (IGZO) …

Phase Change Memory (PCM) is a new nonvolatile memory technology that promises to
disrupt current big data applications and even create entirely new ones. This is because it …

In the devices that integrate phase change memory (PCM) and ovonic threshold switching
(OTS), the OTS threshold voltage often surpasses the RESET operation voltage of PCM. The …

We report a bypass resistive random-access memory (B-RRAM), which combines interface
switching-based RRAM and an IGZO transistor, providing high compatibility with a vertical …

Phase-change random access memory with an ovonic threshold switch (OTS-PRAM) has
become increasingly popular as an alternative to resolve the problem caused by the small …

In this study, we present a vertical bypass resistive random access memory (VB-RRAM) that
integrates interface-type resistive switching RRAM with excellent memory characteristics for …