Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide
The development of novel electron devices requires a continuous support by process and
device simulations in order to improve electrical properties and reduce production costs …
device simulations in order to improve electrical properties and reduce production costs …
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs
M Masunaga - IEEE Transactions on Electron Devices, 2023 - ieeexplore.ieee.org
To design low-noise analog ICs for nuclear power plants, low-frequency noise (LFN) of 4H-
SiC CMOS technology was studied in the frequency range of 3 Hz–10 kHz at room …
SiC CMOS technology was studied in the frequency range of 3 Hz–10 kHz at room …
First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application
MH Weng, MI Idris, S Wright, DT Clark… - Materials Science …, 2018 - Trans Tech Publ
A high-temperature silicon carbide power module using CMOS gate drive technology and
discrete power devices is presented. The power module was aged at 200V and 300° C for …
discrete power devices is presented. The power module was aged at 200V and 300° C for …