Ge 1-x Sn x is receiving a growing interest in the semiconductor community as the material
properties are interesting for both electrical and optical device applications. In this …

Transistors based on III-V semiconductor materials have been used for a variety of analog
and high frequency applications driven by the high electron mobilities in III-V materials. On …

III-V/Ge CMOS on Si platform, realized by heterogeneous integration, is expected to provide
a variety of applications from high speed logic CMOS to versatile SoC chips, where various …

Mobility enhancement technologies have currently been recognized as mandatory for future
scaled MOSFETs. In this paper, we present the basic concept on the choice of channel …

We report the growth, structural, and electrical characterization of epitaxial, strained Si x Ge
1− x-Ge-Si core-double-shell nanowire heterostructures designed to provide quantum …

High quality bulk GaSb and InGaSb quantum wells grown on GaAs substrates were MBE
grown using a AlGaSb (As) metamorphic buffer layers to reduce dislocation density down to …

Alternative channel materials with superior transport properties over conventional silicon
based systems are required for supply voltage scaling in CMOS circuits. Group III-Sb's are a …

In this paper, we report on critical issues and possible solutions for realizing Ge MOSFETs
on the Si platform. The main critical objectives in regard to Ge MOSFETs are (1) formation of …