Recent experimental efforts to identify the intrinsic and extrinsic contributions in the
anomalous Hall effect are reviewed. Benefited from the experimental control of artificial …

The anomalous Hall effect (AHE) can be induced by intrinsic mechanisms due to the band
Berry phase and extrinsic one arising from the impurity scattering. The recently discovered …

We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3
d ferromagnetic metals [Fe, Co, permalloy (Ni 81 Fe 19; Py), and Ni] by varying their …

The anomalous Hall effect (AHE) in the “dirty region”(σ xx< 10 4 S/cm) is studied in
amorphous Co 40 Fe 40 B 20 (CoFeB) thin films. Ostensively the conventionally adopted …

The anomalous Hall effect in the ultrathin film regime is investigated in Fe (001)(1–3 nm)
films epitaxial on MgO (001). The logarithmic localization correction to longitudinal resistivity …

We report the effect of Ir doping on the anomalous Hall effect (AHE) and anomalous Nernst
effect (ANE) in Fe 3 Co single-crystal thin films.(Fe 3 Co) 100--x Ir x (x≤ 12%) composition …

We report a detailed investigation of the magnetic and electrical transport properties in an
antiferromagnetic CeGaSi crystal. It orders ferromagnetically within the ab plane and …

We present an experimental and theoretical study of the anomalous Hall effect (AHE) in
MnAs epilayers grown over GaAs, with the aim to identify the intrinsic contribution to the …

Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge
conversion effects. In this Rapid Communication, the contribution of the B i 2 O 3 interface to …

Co-sputtered Co 2 FeSi thin films are studied by varying the growth temperature (T s) as a
control parameter in terms of the appreciable change in the disorder. The effect of T s on …