This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …

In this work Junctionless (JL) FinFET is designed to operate as an Under Gate (UG)
Dielectric Modulated (DM) biosensor for the detection of various biomolecules-Streptavidin …

In this paper, a junctionless (JL) Silicon FinFET (Fin Field effect transistor) has been
designed as a hydrogen gas (H 2) sensor. An analytical model has been developed to …

In this research work, the threshold voltage and subthreshold swing of cylindrical
surrounding double-gate (CSDG) MOSFET have been analyzed. These analyses are based …

A comprehensive subthreshold model of asymmetric gate all around (GAA) junctionless (JL)
FETs with scaled equivalent oxide thickness is developed in the work. The perimeter …

This paper investigates the electrical characteristics of the nanoscale n-channel double gate
fin field-effect transistor (FinFET) structures and their sensitivity to gate dielectric materials …

Abstract Multiple Fins structured FinFET (M-FinFET) is a promising semiconductor device for
future advancement of CMOS technology. In this paper, a new GaAs based M-FinFET …

This research work reports reliability assessment of junctionless (JL) FinFET in the presence
of interfacial trap charges and radiations. The degradation in performance of JL FinFET is …

Nano-ribbons with gate-all-around (GAA) architecture have been predicted to serve as next-
generation on-chip transistors, among which, the junctionless transistor (JLT) has emerged …

In this work, we have developed analytical models for the channel potential, threshold
voltage and drain current for a cylindrical Gate-All-Around Junctionless Metal-Oxide …