[PDF][PDF] A Comparative Study on Electrical Characteristics of MOS (Si0. 5Ge0. 5) and MOS (4H-SiC) Transistors in 130nm Technology with BSIM3v3 Model''
M Hebali, D Berbara, M Benzohra… - … Journal of Advances …, 2018 - researchgate.net
Silicon-Germanium is of signicant importance with the introduction of strained layers and
SiGe channels into complementary metal-oxide semiconductor (CMOS) technology, and the …
SiGe channels into complementary metal-oxide semiconductor (CMOS) technology, and the …
A Design of Low Power Electrolarynx with Glottal Modified Source.
M Madhushankara, S Bhat… - Journal of Engineering …, 2018 - search.ebscohost.com
The larynx is a flexible part in the respiratory tract, a source of vibration during verbal
communications. An electrolarynx or artificial larynx is a common device adopted by the …
communications. An electrolarynx or artificial larynx is a common device adopted by the …
Effect of Electronic Properties of Si1-xGex and SiC Semiconductors on the Electrical Behavior of MOS Transistors
M Hebali - Physics of Semiconductor Devices & Renewable …, 2024 - psdrej.net
In this paper, the electrical performance of Metal-Oxide-Semiconductor MOS transistors in Si
1-x Ge x and SiC technologies have been studied by BSIM3v3 model. In which the output …
1-x Ge x and SiC technologies have been studied by BSIM3v3 model. In which the output …
[PDF][PDF] An Ultra Low power and High Performance of CMOS (6H-SiC) Current Mirrors in BSIM3v3 130nm Technology
M Hebali, D Berbara, MA Abid, PM Benzohra… - researchgate.net
It has long been known that silicon carbide technology is used in high power and high
temperature fields; this has made it an appropriate alternative to silicon technology in some …
temperature fields; this has made it an appropriate alternative to silicon technology in some …