Analysis and Design of Lossy Capacitive Over-Neutralization Technique for Amplifiers Operating Near fMAX
D Simic, P Reynaert - … Transactions on Circuits and Systems I …, 2021 - ieeexplore.ieee.org
This paper proposes a technique to enhance the maximum achievable power gain (G MAX)
of the two-port active network (2PAN) in the near-f MAX region. This technique is based on …
of the two-port active network (2PAN) in the near-f MAX region. This technique is based on …
A 273–301-GHz amplifier with 21-dB peak gain in 65-nm standard bulk CMOS
This letter presents a world-first 300-GHz amplifier in 65-nm standard bulk CMOS (1P9M
GP). The amplifier has gain from 273 to 301 GHz, and the peak gain is 21 dB at 298 GHz …
GP). The amplifier has gain from 273 to 301 GHz, and the peak gain is 21 dB at 298 GHz …
Design of a 240-ghz lna in 0.13 µm SiGe BiCMOS technology
In this paper, a seven stage low noise amplifier (LNA) in a 0.13 μm SiGe BiCMOS
technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3 …
technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3 …
475-GHz 20-dB-Gain InP-HEMT power amplifier using neutralized common-source architecture
H Hamada, T Tsutsumi, H Matsuzaki… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
We developed a 475-GHz power amplifier (PA) by using our in-house 60-nm InP-HEMT
technology with f_T and f MAx of 320 and 700 GHz, respectively. To attain the positive gain …
technology with f_T and f MAx of 320 and 700 GHz, respectively. To attain the positive gain …
Perspective on active submillimeter electromagnetic wave imaging using CMOS integrated circuits technologies
W Choi, R Han - Journal of Applied Physics, 2023 - pubs.aip.org
The performance of CMOS transmitters and receivers operating at the submillimeter
electromagnetic wave frequencies have sufficiently improved for use in active transmission …
electromagnetic wave frequencies have sufficiently improved for use in active transmission …
220-240-GHz High-Gain Phase Shifter Chain and Power Amplifier for Scalable Large Phased-Arrays
This paper focuses on the design aspects of the key components for a scalable phased-
array system over the 200 GHz frequency range. A high-gain phase shifter chain for 220 to …
array system over the 200 GHz frequency range. A high-gain phase shifter chain for 220 to …
Silicon Technology Innovation Opportunities for Applications at 0.1 to 1 THz Beyond that for Transistors
The smaller wavelengths and wide frequency bands that can be allocated at 0.1 to 1 THz
hold the promise for enabling radar imaging in visually impaired conditions with an angular …
hold the promise for enabling radar imaging in visually impaired conditions with an angular …
Advanced mHEMT Technologies for Use in Radar, Communication and Meteorological Applications
Three sub-100 nm metamorphic high electron mobility transistor (mHEMT) technologies
have been developed for use in next-generation radar, communication and meteorological …
have been developed for use in next-generation radar, communication and meteorological …
A gain boosted single stage wideband InP HBT amplifier for terahertz applications
A 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) based wideband
and novel gain-boosted single-ended power amplifier is presented for millimeter-wave …
and novel gain-boosted single-ended power amplifier is presented for millimeter-wave …
A 275GHz to 296GHz Power Amplifier Using Embedding Network in 65nm-CMOS with 29.4 dB Peak Power Gain
J Yu, Z Wang - 2022 IEEE 8th International Conference on …, 2022 - ieeexplore.ieee.org
This paper reports the design and simulation of 275GHz to 296GHz power amplifier
employing embedding linear lossless reciprocity (LLR) network to boost maximum available …
employing embedding linear lossless reciprocity (LLR) network to boost maximum available …