Charged point defects in semiconductors
EG Seebauer, MC Kratzer - Materials Science and Engineering: R: Reports, 2006 - Elsevier
Native point defects control many aspects of semiconductor behavior. Such defects can be
electrically charged, both in the bulk and on the surface. This charging can affect numerous …
electrically charged, both in the bulk and on the surface. This charging can affect numerous …
Boron diffusion in silicon: the anomalies and control by point defect engineering
The fabrication of ultra large-scale integrated (ULSI) circuits with ever shrinking feature size
requires a continued reduction of diffusion lengths of dopants in Si. However, boron implants …
requires a continued reduction of diffusion lengths of dopants in Si. However, boron implants …
Diffusion and interactions of point defects in silicon: Molecular dynamics simulations
GH Gilmer, TD De La Rubia, DM Stock… - Nuclear Instruments and …, 1995 - Elsevier
We have simulated the motion and clustering of vacancies and interstitials in silicon using
molecular dynamics methods. The diffusion coefficients of isolated defects were calculated …
molecular dynamics methods. The diffusion coefficients of isolated defects were calculated …
Stability of defects in crystalline silicon and their role in amorphization
Using molecular-dynamics simulation techniques, we have investigated the role that point
defects and interstitial-vacancy complexes have on the silicon amorphization process. We …
defects and interstitial-vacancy complexes have on the silicon amorphization process. We …
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial
We have carried out classical molecular dynamics simulations to study the configurational
and energetic properties of the Si self-interstitial. We have shown that the Si self-interstitial …
and energetic properties of the Si self-interstitial. We have shown that the Si self-interstitial …
Empirical bond-order potential description of thermodynamic properties of crystalline silicon
LJ Porter, S Yip, M Yamaguchi, H Kaburaki… - Journal of applied …, 1997 - pubs.aip.org
Thermodynamic properties of silicon (diamond cubic phase) are calculated using an
empirical many-body potential developed by Tersoff [Phys. Rev. Lett. 56, 632 (1986)] based …
empirical many-body potential developed by Tersoff [Phys. Rev. Lett. 56, 632 (1986)] based …
Correlation between self-diffusion in Si and the migration mechanisms of vacancies and self-interstitials: An atomistic study
The migration of point defects in silicon and the corresponding atomic mobility are
investigated by comprehensive classical molecular-dynamics simulations using the …
investigated by comprehensive classical molecular-dynamics simulations using the …
Effect of temperature and grain boundary on void evolution in irradiated copper: A phase-field study
The continued existence of high-energy radiation in nuclear reactors at high temperatures
results in the formation of radiation-induced voids, which will further lead to inevitable …
results in the formation of radiation-induced voids, which will further lead to inevitable …
Atomistic study of the migration of di-and tri-interstitials in silicon
A comprehensive study on the migration of di-and tri-interstitials in silicon is performed using
classical molecular dynamics simulations with the Stillinger-Weber potential. At first the …
classical molecular dynamics simulations with the Stillinger-Weber potential. At first the …
Front-end process modeling in silicon
Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …
semiconductor devices. Ion implantation and thermal anneal models are key to predict …