Point defect engineering in thin-film solar cells

JS Park, S Kim, Z Xie, A Walsh - Nature Reviews Materials, 2018 - nature.com
Control of defect processes in photovoltaic materials is essential for realizing high-efficiency
solar cells and related optoelectronic devices. Native defects and extrinsic dopants tune the …

Algorithm advances and applications of time‐dependent first‐principles simulations for ultrafast dynamics

WH Liu, Z Wang, ZH Chen, JW Luo… - Wiley …, 2022 - Wiley Online Library
Far from equilibrium phenomenon is a central theme of contemporary material research.
Such phenomenon can exhibit itself in atomic structure and dynamics, but very often it also …

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

A Lennon, J Colwell, KP Rodbell - Progress in Photovoltaics …, 2019 - Wiley Online Library
Copper‐plated interconnects were widely adopted for volume manufacture of integrated
circuits after more than a decade of intensive research to demonstrate that use of Cu would …

Computing and compressing electron repulsion integrals on FPGAs

X Wu, T Kenter, R Schade, TD Kühne… - 2023 IEEE 31st …, 2023 - ieeexplore.ieee.org
The computation of electron repulsion integrals (ERIs) over Gaussian-type orbitals (GTOs) is
a challenging problem in quantum-mechanics-based atomistic simulations. In practical …

Impurity diffusion induced dynamic electron donors in semiconductors

WH Liu, JW Luo, SS Li, LW Wang - Physical Review B, 2019 - APS
Low-energy impurity diffusion in a host material is often regarded as an adiabatic process,
characterized by its adiabatic potential energy barrier. Here we show that the diffusion …

Theoretical study of defect-mediated ionic transport in Li, Na, and K and aluminas

S Negi, A Carvalho, AH Castro Neto - Physical Review B, 2024 - APS
Alkali-metal β/β′′ aluminas are among the fastest ionic conductors, yet little is understood
about the role of defects in the ion transport mechanism. Here, we use density functional …

Why Te Doping Can Break the Traditional n-Type Doping Limit of Silicon

S Shim, H Jang, Y Kang - Inorganic Chemistry, 2023 - ACS Publications
We report a theoretical investigation of the impact of hyperdoping with chalcogens (Se and
Te) and pnictogens (P and As) on free-carrier concentrations of Si, employing density …

[HTML][HTML] Mechanism of Na accumulation at extended defects in Si from first-principles

JS Park, MKY Chan - Journal of Applied Physics, 2018 - pubs.aip.org
Sodium (Na) impurities in silicon solar cells are considered to play an important role in
potential-induced degradation (PID), a significant cause of solar cell degradation and failure …

Transition metal impurities in silicon: computational search for a semiconductor qubit

CW Lee, M Singh, AC Tamboli… - npj Computational …, 2022 - nature.com
Semiconductors offer a promising platform for physical implementation of qubits, but their
broad adoption is presently hindered by limited scalability and/or very low operating …

The Cu photoluminescence defect and the early stages of Cu precipitation in Si

TM Vincent, SK Estreicher, J Weber… - Journal of Applied …, 2020 - pubs.aip.org
This theoretical–experimental study focuses on the formation of the substitutional-tri-
interstitial cluster Cu s1 Cu i3, which has been proposed as the photoluminescence defect …