Design considerations on the low-voltage MOSFET applications to wheelchair drive systems

Full-Bridge DC-DC Power Converter for Telecom applications with Advanced Trench Gate MOSFETs

R Bojoi, F Fusillo, A Raciti, S Musumeci… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
This paper deals with the performance evaluation of enhanced MOSFET based on a trench
gate layout in full-bridge DC-DC power converter with synchronous rectifiers for telecom …
被引用次数：35 相关文章 所有 2 个版本

Dead Time Reverse Conduction Investigation in GaN-Based Inverter for Motor Drives

S Musumeci, V Barba, F Mandrile… - IECON 2022–48th …, 2022 - ieeexplore.ieee.org
The paper deals with the reverse conduction during the dead time of low-voltage GaN FETs
in inverters for motor control applications. The current variation caused by the sinusoidal …
被引用次数：10 相关文章 所有 2 个版本

Discrete Power Devices and Power Modules

A Chvála, D Cristaldi, D Donoval, G Greco… - … Systems Integration and …, 2016 - Springer
Methods devoted to electrothermal simulation are presented as a useful tool for both the
analysis and characterization of behavior of power semiconductor devices standing alone …
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[引用][C] D3. 3.2 Final Multi-Level Models for Discrete and Power Devices Public Summary

GV ST, GG ST, D Cristaldi, A Raciti, E Motoasca… - 2011
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