Cross-sectional cathodoluminescence (CL) and scanning capacitance microscopy (SCM)
measurements were carried out for silicon carbide (SiC) metal–oxide–semiconductor field …

Defect creation in both the vertical and lateral directions of Si substrates during plasma
processing has become a critical problem in the fabrication of three-dimensional structural …

A procedure to obtain the semi-quantitative depth distribution of radiative recombination
centers in silicon power devices has been developed using cross-sectional …

We performed cross-sectional cathodoluminescence (CL) for gallium nitride (GaN)-based
high electron mobility transistors (HEMTs) to investigate process-induced defects. The cross …

We investigated the residual defects in low-dose (10 13 cm− 2) arsenic implanted Si after
high-temperature (1100° C) annealing. The presence of residual damage was successfully …

We report on the relationship between carrier lifetime degradation of floating-zone silicon
(FZ Si) and the guard ring formation process for silicon integrated gate bipolar transistor (Si …

Residual damage inlow-dose'implanted andhigh-temperature'annealed Si have not been
studied well due to lack of characterization technique and awareness of its risk for device …

In order to prevent the degradation of device performance, it is necessary to detect and
reduce residual damage remaining after ion implantation and annealing. In this study, we …

Power semiconductor devices are key components for highly efficient energy conversion
systems. Elimination or proper control of crystalline defects in the devices is important to …

抄録 Cathodoluminescence (CL) is a kind of light emission as a result of electron beam
irradiation to various materials. In the measurement technique using CL, scanning electron …