FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Comparative simulation analysis of process-induced variability in nanoscale SOI and bulk trigate FinFETs
This paper presents a comprehensive simulation study of the process and statistical
variability in 16-nm technology node bulk and silicon-on-insulator (SOI) fin field effect …
variability in 16-nm technology node bulk and silicon-on-insulator (SOI) fin field effect …
Partially cylindrical fin field-effect transistor: a novel device for nanoscale applications
In this paper, we have proposed a new partially cylindrical fin field-effect transistor (PC-
FinFET), where the upper region of fins has partially cylindrical shape and the lower region …
FinFET), where the upper region of fins has partially cylindrical shape and the lower region …
Nanoscale tri gate MOSFET for ultra low power applications using high-k dielectrics
The Triple-Gate (TG) MOSFET has emerged as one of the promising devices to extend
CMOS technology beyond the scaling limit of conventional CMOS technology. Triple gate …
CMOS technology beyond the scaling limit of conventional CMOS technology. Triple gate …
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
SOI junctionless (JL) FinFETs are well-suited for future wireless communication systems;
however, they suffer from the self-heating effect (SHE), which diminishes performance at …
however, they suffer from the self-heating effect (SHE), which diminishes performance at …
Corner effects in SOI-Tri gate FinFET structure by using 3D Process and device simulations
MP Kumar, SK Gupta, M Paul - 2010 International Conference …, 2010 - ieeexplore.ieee.org
SOI FinFET transistors have emerged as novel devices having superior controls over short
channel effects (SCE) than the conventional MOS transistor devices. However despite these …
channel effects (SCE) than the conventional MOS transistor devices. However despite these …
Analytical modelling of electrical parameters and the analogue performance of cylindrical gate-all-around FinFET
This paper presents the cylindrical gate-all-around (GAA) silicon on insulator (SOI) FinFET,
which not only eliminates the corner effect but also shows high on-drain current (I_ ON I …
which not only eliminates the corner effect but also shows high on-drain current (I_ ON I …
Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low‐Power Applications
S Rai, J Sahu, W Dattatray, RA Mishra… - International Scholarly …, 2012 - Wiley Online Library
The FinFETs recently have been the rallying point for the engineers as far as the
development of the technology is concerned. The authors here have tried successfully to …
development of the technology is concerned. The authors here have tried successfully to …
Leakage suppression approaches in bulk FinFETs
TEA Khan, S Reji, TAS Hameed - Materials Today: Proceedings, 2019 - Elsevier
Abstract The Bulk FinFETs are preferred due to its low wafer cost, less defect density and
less heat transfer even though the substrate leakage problem will turn up. Technological …
less heat transfer even though the substrate leakage problem will turn up. Technological …
Threshold voltage variability induced by statistical parameters fluctuations in nanoscale bulk and SOI FinFETs
The main aim of this work is to investigate a simulation study of threshold voltage (V th)
variability induced by statistical parameters fluctuations in 14-nm bulk and silicon-on …
variability induced by statistical parameters fluctuations in 14-nm bulk and silicon-on …