How to report and benchmark emerging field-effect transistors

Z Cheng, CS Pang, P Wang, ST Le, Y Wu… - Nature …, 2022 - nature.com
The use of organic, oxide and low-dimensional materials in field-effect transistors has now
been studied for decades. However, properly reporting and comparing device performance …

Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors

Z Yu, ZY Ong, S Li, JB Xu, G Zhang… - Advanced Functional …, 2017 - Wiley Online Library
Transition‐metal dichalcogenides (TMDCs) are an important class of two‐dimensional (2D)
layered materials for electronic and optoelectronic applications, due to their ultimate body …

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

A Mondal, C Biswas, S Park, W Cha, SH Kang… - Nature …, 2024 - nature.com
Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …

Scaled indium oxide transistors fabricated using atomic layer deposition

M Si, Z Lin, Z Chen, X Sun, H Wang, PD Ye - Nature Electronics, 2022 - nature.com
To continue to improve integrated circuit performance and functionality, scaled transistors
with short channel lengths and low thickness are needed. But further scaling of silicon …

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Y Liu, J Guo, E Zhu, L Liao, SJ Lee, M Ding, I Shakir… - Nature, 2018 - nature.com
The junctions formed at the contact between metallic electrodes and semiconductor
materials are crucial components of electronic and optoelectronic devices. Metal …

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

L Yang, K Majumdar, H Liu, Y Du, H Wu… - Nano …, 2014 - ACS Publications
Low-resistivity metal–semiconductor (M–S) contact is one of the urgent challenges in the
research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride …

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Y Du, H Liu, Y Deng, PD Ye - ACS nano, 2014 - ACS Publications
Although monolayer black phosphorus (BP), or phosphorene, has been successfully
exfoliated and its optical properties have been explored, most of the electrical performance …

Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing

D Sarkar, X Xie, J Kang, H Zhang, W Liu… - Nano …, 2015 - ACS Publications
Transition metal dichalcogenides (TMDs), belonging to the class of two-dimensional (2D)
layered materials, have instigated a lot of interest in diverse application fields due to their …

extremely thin amorphous indium oxide transistors

A Charnas, Z Zhang, Z Lin, D Zheng… - Advanced …, 2024 - Wiley Online Library
Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …

[HTML][HTML] Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

A Rai, HCP Movva, A Roy, D Taneja, S Chowdhury… - Crystals, 2018 - mdpi.com
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …