K Saurabh, S Singh - Journal of The Institution of Engineers (India): Series …, 2024 - Springer
In this paper, a comparative study of different efficiency enhancement architectures for power amplifiers (PA) has been undertaken. Architectures such as Doherty, Outphasing and …
This paper presents a linear Doherty power amplifier (PA) with adaptive bias circuit for average power-tracking (APT) operation. The Doherty PA is linked with a multi-level DC-DC …
D Fishler, Z Popović, T Barton - IEEE Journal of Microwaves, 2021 - ieeexplore.ieee.org
This paper presents a study of supply modulation in a Doherty power amplifier (DPA). To validate a simplified theoretical model, a 3.5 GHz conventional symmetrical DPA using a 6 …
W Lee, H Kang, H Lee, J Bae, S Oh, H Oh, H Koo… - IEEE …, 2019 - ieeexplore.ieee.org
This paper presents a two-stage stacked power amplifier integrated circuit (PAIC) for broadband and high efficiency using a 2-μm InGap/GaAs HBT process with a second …
L Anttila, V Toivonen, O Tervo, E Tiirola… - 2024 Joint European …, 2024 - ieeexplore.ieee.org
The future 6G mobile communication systems are expected not only to improve the broadband connectivity and other services but also enhance the network coverage, energy …
C Yang, K Jin, W Zhou, H Hu… - IEEE Microwave and …, 2024 - ieeexplore.ieee.org
Power amplifier (PA) is the core device for dc-RF conversion in wireless power transfer (WPT) system. However, the drain efficiency (DE) of PA decreases significantly due to the …
X Qi, F Xiao - IET Microwaves, Antennas & Propagation, 2020 - Wiley Online Library
At present, it is a trend in wireless communication to integrate conventional separate components into a single one for further miniaturisation and whole performance …
High data-rate communication systems require the transmission of radio frequency signals which are modulated in both amplitude and phase, presenting peak power envelope swings …
DK Sharma, P Aggarwal, K Giri… - 2021 IEEE 18th India …, 2021 - ieeexplore.ieee.org
In this paper, a highly-efficient and high-power silicon integrated circuit (SiC) high electron mobility transistor (HEMT) gallium nitride (GaN) based Doherty power amplifier (DPA) …